อินทิเกรตพาวเวอร์สเตจซีรีส์ DrMOS SiC6xx

Vishay Semiconductors DrMOS SiC6xx Integrated Power Stage are optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay's proprietary 5mm x 5mm MLP package, SiC6xx enables the voltage regulator designs to deliver up to 60A continuous current per phase. The internal power MOSFETs utilizes Vishay's state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. 

The SiC6xx incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detect to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3V (SiC620A) / 5V (SiC620) PWM logic.
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