Results: 53
Select Image Part # Mfr. Description Datasheet Availability Pricing (THB) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 630In Stock
10,000On Order
Min.: 1
Mult.: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 20 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 869In Stock
Min.: 1
Mult.: 1
: 2,000

TOLL-8 650 V 75 mOhms
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 813In Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 28 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC + 175 C 124 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 780In Stock
Min.: 1
Mult.: 1
: 1,800

SMD/SMT HDSOP-16 N-Channel 1 Channel 650 V 34.7 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 187 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 643In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT LHSOF-4 N-Channel 1 Channel 650 V 30 A 95 mOhms 5.6 V 14.9 nC - 55 C + 175 C 141 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 218In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,612In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 168 A 13.1 mOhms - 7V, + 23 V 4.5 V 113 nC - 55 C + 175 C 681 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 2,918In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 68 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2 6,319In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 53 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 194 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 256In Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 158 A 13.1 mOhms - 7 V, + 23 V 5.6 V 112 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 950In Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 68 A 33 mOhms - 7 V, + 23 V 5.6 V 42 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 280In Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 58 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 259In Stock
750Expected 5/18/2026
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 94 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 499 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 558In Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 97 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 394 W Enhancement
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling
796On Order
Min.: 1
Mult.: 1
: 1,800

SMD/SMT N-Channel 1 Channel 650 V 82 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling 1,664In Stock
Min.: 1
Mult.: 1
: 1,800

SMD/SMT N-Channel 1 Channel 650 V 68 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,900In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 81 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,912In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 48.1 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 237 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,349In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 41.4 A 73 mOhms - 7 V, + 23 V 5.6 V 19 nC - 55 C + 175 C 208 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 1,970In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT PG-LHSOF-4 N-Channel 650 V 79 A 33 mOhms - 7 V to + 23 V 5.6 V 42 nC - 55 C + 175 C 357 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V G2 1,716In Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT PG-LHSOF-4 N-Channel 650 V 68 A 41 mOhms - 7 V to + 23 V 5.6 V 34 nC - 55 C + 175 C 315 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2 276In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 446In Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 34.9 A 73 mOhms - 7 V, + 23 V 5.6 V 18 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 11In Stock
2,250On Order
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 154 A 13.1 mOhms - 7 V, + 23 V 5.6 V 113 nC - 55 C + 175 C 651 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2 120In Stock
480Expected 6/11/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC