CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs help EV makers create 11kW and 22kW bidirectional onboard chargers with increased efficiency, power density, and reliability. These devices operate reliably at high temperatures (Tj,max +175°C), featuring Infineon’s proprietary. XT die attach technology for best-in-class thermal impedance for an equivalent die size.

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 Mfr.
Description Datasheet Availability Pricing (THB) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Infineon Technologies SiC MOSFETs AUTOMOTIVE_SICMOS
Datasheet
271In Stock
฿798.35
฿498.13
฿467.81
฿462.15
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 89 A 22 mOhms - 2 V, + 20 V 5.6 V 81 nC - 55 C + 175 C 319 W Enhancement
Infineon Technologies SiC MOSFETs AUTOMOTIVE_SICMOS
Datasheet
240Expected 5/13/2027
฿599.09
฿443.49
฿329.87
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 60 A 36 mOhms - 2 V, + 20 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement
Infineon Technologies SiC MOSFETs AUTOMOTIVE_SICMOS
Datasheet
Lead-Time 52 Weeks
฿757.03
฿531.45
฿421.50
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 75 A 27 mOhms - 2 V, + 20 V 5.6 V 67 nC - 55 C + 175 C 278 W Enhancement
Infineon Technologies SiC MOSFETs AUTOMOTIVE_SICMOS
Datasheet
Lead-Time 52 Weeks
฿383.18
฿254.56
฿236.24
฿220.58
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 44 A 52 mOhms - 2 V, + 20 V 5.6 V 34 nC - 55 C + 175 C 185 W Enhancement