MA4E2040 GaAs Beam Lead Schottky Diode

MACOM MA4E2040 GaAs Beam Lead Schottky Diode is fabricated on OMCDVD epitaxial wafers. These diode wafers use a process designed for high device uniformity and low parasitics. The MA4E2040 diodes feature low series resistance, low capacitance, and high cut-off frequency. The high cut-off frequency allows the use through millimeter wave frequencies. This Schottky diode operates at -65ºC to 125ºC operating temperature. Typical applications include single band, double band balanced mixers and automotive radar systems, and police radar detectors.