IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (THB) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Minimum Operating Temperature Maximum Operating Temperature Technology Packaging
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module 17In Stock
฿4,681.13
฿4,514.86
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 6In Stock
฿9,171.00
฿7,336.40
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 890 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module 29In Stock
฿5,818.34
฿5,748.70
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 51In Stock
฿7,261.09
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 11In Stock
50Expected 11/3/2026
฿8,523.26
฿6,884.91
Min.: 1
Mult.: 1
No
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 300 A dual IGBT module 5In Stock
20On Order
฿4,182.33
฿3,950.42
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 300 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 2300 V, 1800 A dual IGBT module
This product may require additional documentation to export from the United States.
Non-Stocked Lead-Time 39 Weeks
฿43,182.72
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules PP IHM I
This product may require additional documentation to export from the United States.
Non-Stocked Lead-Time 39 Weeks
฿44,422.22
Min.: 3
Mult.: 3
Si Tray
Infineon Technologies IGBT Modules 1200 V, 750 A dual IGBT module Non-Stocked Lead-Time 24 Weeks
฿6,207.85
Min.: 10
Mult.: 10
IGBT Silicon Modules Dual 1.2 kV 1.5 V 750 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1700 V, 750 A dual IGBT module Non-Stocked Lead-Time 24 Weeks
฿7,846.53
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.7 kV 1.7 V 750 A 100 nA - 40 C + 175 C Si Tray