Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics  Automotive-Grade Silicon Carbide Power MOSFETs are  developed using ST's  advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices  feature low on-resistance per unit area and very good switching  performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (THB) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package 558In Stock
฿810.01
฿648.41
฿560.78
฿531.12
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 900 V 110 A 15.8 mOhms - 10 V, + 22 V 3.1 V 138 nC - 55 C + 200 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 443In Stock
฿923.63
฿739.37
฿639.41
฿605.42
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 129 A 15 mOhms - 18 V, + 18 V 4.2 V 167 nC - 55 C + 200 C 673 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 181In Stock
600Expected 7/23/2027
฿667.07
฿395.18
Min.: 1
Mult.: 1
Through Hole Hip247-4 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C + 200 C 541 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package 869In Stock
Cut Tape
฿442.49
฿329.53
฿274.89
฿244.90
Reel
฿228.58
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 19In Stock
1,200Expected 10/29/2026
Cut Tape
฿742.04
฿554.11
฿479.47
Reel
฿453.82
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 14In Stock
1,200On Order
฿667.07
฿433.16
฿383.18
฿352.53
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 56 A 37 mOhms - 18 V, + 18 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 43In Stock
600On Order
฿631.41
฿392.84
฿368.52
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 1.2 kV 56 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 14In Stock
600Expected 4/30/2027
฿466.15
฿355.19
฿295.88
฿263.89
฿246.23
Min.: 1
Mult.: 1
Through Hole HiP-247-3 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
1,200Expected 8/6/2027
Cut Tape
฿1,027.26
฿822.34
฿711.05
Reel
฿673.40
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 750 V 110 A 15 mOhms - 10 V, + 22 V 3.2 V 154 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
1,985On Order
Cut Tape
฿898.64
฿719.38
฿622.08
฿589.10
Reel
฿550.45
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 112 A 22 mOhms - 10 V, + 22 V 3 V 150 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
1,997Expected 4/16/2027
Cut Tape
฿611.76
฿378.85
฿373.85
Reel
฿345.20
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
998Expected 6/4/2027
Cut Tape
฿768.36
฿498.80
฿497.80
฿470.48
Reel
฿439.49
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 900 V 110 A 12 mOhms - 18 V, + 18 V 4.2 V 138 nC - 55 C + 175 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
1,200Expected 4/9/2027
Cut Tape
฿540.12
฿411.50
฿342.86
Reel
฿305.54
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 40 A 72 mOhms - 10 V, + 22 V 3 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
600Expected 8/6/2027
Cut Tape
฿455.15
฿346.86
฿288.88
Reel
฿257.56
฿243.57
Min.: 1
Mult.: 1
: 600
SMD/SMT H2PAK-2 1 Channel 650 V 7 A 40 mOhms - 30 V, + 30 V 5 V 36 nC - 55 C + 150 C 266 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
1,800Expected 8/13/2027
Cut Tape
฿450.82
฿291.22
฿265.56
Reel
฿241.24
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 4.2 V 29 nC - 55 C + 175 C 185 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
599Expected 12/14/2026
Cut Tape
฿488.80
฿335.53
฿295.55
Reel
฿266.56
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 37 nC - 55 C + 175 C 223 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
100On Order
฿455.82
฿339.53
฿282.89
฿252.23
Min.: 1
Mult.: 1
Through Hole HiP247-4 1 Channel 1.2 kV 40 A 54 mOhms - 10 V, + 22 V 3.1 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101