NV6169 GaNFast™ Power ICs

Navitas Semiconductor NV6169 GaNFast™ Power ICs combine a high-performance eMode GaN FET with an integrated gate drive for exceptional high-frequency and efficient operation. The Navitas Semiconductor NV6169 features GaNSense™ technology and offers real-time voltage, current, and temperature sensing for enhanced performance and robustness beyond traditional GaN or silicon devices. GaNSense eliminates external current sensing resistors through lossless current sensing, improving efficiency. It also provides short-circuit and over-temperature protection for excellent system reliability and supports auto-standby mode for superior light, tiny, and no-load efficiency. These GaN ICs deliver top-tier dV/dt immunity, high-speed integrated drive, and compact SMT QFN packaging, enabling simple, fast, and reliable design solutions.