STMicroelectronics HB Trench Gate Field-Stop IGBTs
STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
- Designed for soft commutation only
- Maximum junction temperature: TJ = +175°C
- High-speed switching series
- Minimized tail current
- VCE(sat) = 1.55V (typ.) at IC = 30A
- Low VF soft recovery co-packaged diode
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Lead-free package
- Very fast soft recovery antiparallel diode
Applications
- Microwave oven
- Resonant converters
- Photovoltaic inverters
- High frequency converters
Related Products
STMicroelectronics STEVAL-CTM015V1 3-Phase Motor Drive Eval Kit
Provides a complete solution for a 3-phase switched reluctance motor (SRM) drive.
View Results ( 2 ) Page
| หมายเลขชิ้นส่วน | เอกสารข้อมูลสินค้า | หีบห่อ/บรรจุภัณฑ์ | รูปแบบการติด | ค่าสูงสุดแรงดันระหว่างขาคอลเลกเตอร์และขาอิมิเตอร์ VCEO |
|---|---|---|---|---|
| STGP30H60DFB |  |
TO-220-3 | Through Hole | 600 V |
| STGB30H60DFB | |
D2PAK-3 | SMD/SMT | 600 V |
เผยแพร่แล้ว: 2559-04-21
| อัปเดตแล้ว: 2566-10-17