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MACOM MAGe-102425-300 GaN-on-Si Power Transistors

MACOM Technology MAGe-102425-300 GaN-on-Si Power Transistors are 300W rugged D-mode amplifiers optimized for commercial-scale solid-state RF energy applications. Optimized for 2.4GHz to 2.5GHz CW signal operation, MACOM Technology MAGe-102425-300 transistors support CW and pulsed operation with peak output power levels of 300W (54.8dBm) in an air cavity ceramic package. The wide range of applications includes solid-state cooking, RF plasma generation, material drying, industrial heating, automotive ignition, lighting, and medical.

Features

  • Optimized for RF energy applications
  • Suitable for linear/saturated applications
  • 300W output power for CW and pulsed operation
  • Internally pre-matched
  • 50V operation
  • 100% RF tested
  • RoHS compliant

Applications

  • Solid-state cooking
  • RF plasma generation
  • Material drying
  • Industrial heating
  • Automotive ignition
  • Lighting
  • Medical

Specifications

  • 2.45GHz typical frequency
  • 16.7dB typical gain
  • 62% typical drain efficiency
  • 54mA maximum drain-/gate-source leakage current
  • 0.12W typical on-resistance
  • 130V maximum drain-source voltage
  • -10V to 3V maximum gate-source voltage range
  • 55.6dB typical output power
  • -40°C to +85°C case operating temperature range
  • -40°C to +225°C channel operating temperature range
  • Thermal resistance
    • 0.76°C/W using finite element analysis
    • 0.64°C/W using infrared measurement of die surface temperature

Functional Schematic

Schematic - MACOM MAGe-102425-300 GaN-on-Si Power Transistors
Published: 2562-11-04 | Updated: 2566-09-07