Broadcom AFBR-S4N44C013 4mm NUV-HD Single SiPM

Broadcom^® AFBR-S4N44C013 4mm NUV-HD Single SiPM (Silicon Photomultiplier) is designed for ultra-sensitive precision measurement of single photons. This photomultiplier provides an active area of 3.72mm x 3.72mm. The high packing density of the single chip is achieved using Through-Silicon-Via (TSV) technology. A larger area can be covered by tiling multiple AFBR-S4N44C013 arrays without edge losses. The passivation layer is glass, highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards the blue and near-UV light spectrum region.

The AFBR-S4N44C013 SiPM is best suited for the detection of low-level pulsed light sources. This includes detection of Cherenkov light or scintillation light from the most common organic (plastic) and inorganic scintillator materials. The AFBR-S4N44C013 SiPM is lead-free and is compliant with RoHS and REACH. Typical applications include X-ray and gamma ray detection, gamma ray spectroscopy, and nuclear medicine.

Features

High Photo Detection Efficiency (PDE) of more than 55% at 420nm
High fill factors
Excellent Single Photon Time Resolution (SPTR) and CRT
180mV (3 sigma) breakdown voltage with good uniformity

4-side tileable with TSV technology
Highly transparent glass protection layer
Excellent uniformity of gain
RoHS and REACH compliant

Specifications

420nm spectral range
26.9V breakdown voltage
26mV/K temperature coefficient of breakdown voltage
Photodetection efficiency:
- 43% (typical) measure at 3V above breakdown
- 55% (performance) at 7V above breakdown
120kcps/mm² (typical) dark count rate per unit