กลับไปยัง APC-E

APC-E Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

Features

  • High breakdown voltage
  • Low on-state resistance
  • High switching frequency operation and very low switching losses
  • High temperature handling capability up to +175°C
  • Industrial and AEC-Q101 qualified options
  • Excellent avalanche ruggedness
  • Very fast and robust intrinsic body diode with low reverse recovery
  • Improves system efficiency compared to Si IGBTs or MOSFETs
  • Enables high power density
  • Reduces heat dissipation requirements
  • Operates under rugged conditions
  • Provides enhanced system reliability and extended system lifespans
  • Enables the engineering of more compact power electronic systems
  • Halogen-free and RoHS compliant

Applications

  • Electric vehicles
    • Inverters
    • Onboard chargers
    • Charging
  • Energy storage
  • Industrial
    • Motor drives
    • Power supplies (PSUs)
    • Uninterruptible power supplies (UPS)
  • PSUs for servers and storage
  • Heating, Ventilation, and Air Conditioning (HVAC) systems
  • Solar
    • Central inverters
    • String inverters
    • Micro inverters

Specifications

  • 650V to 1.7kV drain-source breakdown voltage options
  • -10V to 25V gate-source voltage range
  • 3.6V to 4.2V gate-source threshold voltage range
  • 6.8A to 160A continuous drain current range
  • 13mΩ to 1kΩ on-drain-source resistance range
  • 40nC to 213nC gate charge range
  • 151W to 750W power dissipation range
  • 9ns to 18.5ns typical turn-on delay time range
  • 13ns to 24.7ns rise time range
  • 6ns to 13ns fall time range
  • 19ns to 43.6ns typical turn-off delay time range
  • -55°C to +175°C operating temperature range
  • Through-hole TO-247-3, TO-247-3L, TO-247-4, and TO-247-4L package options

Application Guides

เผยแพร่แล้ว: 2568-04-18 | อัปเดตแล้ว: 2568-08-05