Analog Devices Inc. HMC1099 10W GaN Power Amplifiers

Analog Devices HMC1099 10W GaN Power Amplifiers feature a gallium nitride (GaN), power amplifier covering a 0.01-1.1GHz instantaneous bandwidth. The HMC1099 is internally prematched to provide simple, external tuning for optimized performance across the full operating frequency range.

The HMC1099 power amplifiers deliver >10W broadband power with a typical 18.5dB signal gain and ±0.5dB gain flatness. Operating from a 28V at 100mA supply voltage, the HMC1099 power amplifiers provide a high saturated output power of 40.5dB.

These amplifiers are ideal for continuous wave (CW) or pulsed applications. With up to 69% power-added efficiency (PAE), the HMC1099 amplifiers minimize power consumption, reduce self-heating, and extend battery life in portable applications.


  • High saturated output power (PSAT): 40.5dBm typical
  • High small-signal gain: 18.5dB typical
  • High power added efficiency (PAE): 69% typical
  • Instantaneous bandwidth: 0.01GHz to 1.1GHz
  • Supply voltage: VDD= 28V at 100mA
  • Internal prematching
    • Simple and compact external tuning for optimal performance
  • 32-lead, 5mm×5mm, LFCSP package: 25mm2


  • Extended battery operation for public mobile radios
  • Power amplifier stage for wireless infrastructures
  • Test and measurement equipment
  • Commercial and military radars
  • General-purpose transmitter amplification

Functional Block Diagram

Block Diagram - Analog Devices Inc. HMC1099 10W GaN Power Amplifiers
เผยแพร่แล้ว: 2559-04-11 | อัปเดตแล้ว: 2565-03-11