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กรุณาเปลี่ยนตัวกรองของคุณแล้วลองอีกครั้ง

Qorvo QPD1014A GaN Input Matched Transistors
Qorvo QPD1014A GaN Input Matched Transistors
01/20/2569
15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.
Qorvo QPD1011A GaN Input Matched Transistors
Qorvo QPD1011A GaN Input Matched Transistors
01/19/2569
7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.
Qorvo QPD1004A GaN Input Matched Transistors
Qorvo QPD1004A GaN Input Matched Transistors
01/19/2569
25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
12/04/2568
E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.
STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor
STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor
11/07/2568
Built on GaN technology and designed for demanding power conversion applications.
STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor
STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor
10/28/2568
E-Mode PowerGaN transistor optimized for efficient power conversion in demanding applications.
Guerrilla RF GRFx GaN HEMT Power Transistors
Guerrilla RF GRFx GaN HEMT Power Transistors
08/18/2568
Unmatched discrete GaN-on-SiC HEMT power transistors designed for high-performance RF applications.
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07/03/2568
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07/03/2568
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs
07/01/2568
These FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.
Infineon Technologies 700V CoolGaN™ G5 Power Transistors
Infineon Technologies 700V CoolGaN™ G5 Power Transistors
05/02/2568
Designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching.
Nexperia GANB8R0-040CBA Bi-Directional GaN FET
Nexperia GANB8R0-040CBA Bi-Directional GaN FET
04/14/2568
40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.
Infineon Technologies CoolGaN™ G3 Transistors
Infineon Technologies CoolGaN™ G3 Transistors
04/10/2568
designed to deliver superior performance in high-power density applications.
ROHM Semiconductor GNP2x 650V Enhancement Mode GaN HEMTs
ROHM Semiconductor GNP2x 650V Enhancement Mode GaN HEMTs
01/10/2568
Designed for high-performance power conversion applications.
Infineon Technologies CoolGaN™ 650V G5 Transistors
Infineon Technologies CoolGaN™ 650V G5 Transistors
12/20/2567
Features highly efficient gallium nitride (GaN) transistor technology for power conversion.
MACOM GaN on SiC Transistors
MACOM GaN on SiC Transistors
11/26/2567
Next-generation RF power transistors that deliver industry-leading gain, efficiency, and power. 
Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors
Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors
11/12/2567
Features highly efficient GaN transistor technology for power conversion up to 650V.
Nexperia FET GaN สองทิศทาง GANB4R8-040CBA
Nexperia FET GaN สองทิศทาง GANB4R8-040CBA
10/01/2567
ทรานซิสเตอร์การเคลื่อนที่ของอิเล็กตรอนสูงชนิด GaN (HEMT) แบบสองทิศทางขนาด 40 V, 4.8 m.Ω ในแพคเกจ WLCSP
Qorvo QPD1035 GaN RF Power Transistors
Qorvo QPD1035 GaN RF Power Transistors
09/12/2567
40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply.
Ampleon CLP24H4S30P GaN-SiC HEMT Power Transistor
Ampleon CLP24H4S30P GaN-SiC HEMT Power Transistor
07/23/2567
Designed for continuous wave (CW) applications within the 2400MHz to 2500MHz frequency range.
Nexperia FET แกลเลียมไนไตรด์ (GaN) GANE3R9-150QBA
Nexperia FET แกลเลียมไนไตรด์ (GaN) GANE3R9-150QBA
07/02/2567
FET แกลเลียมไนไตรด์ (GaN) อเนกประสงค์ขนาด 150 V, 3.9 mΩ ในแพคเกจ VQFN
Infineon Technologies 700V CoolGaN™ G4 Power Transistors
Infineon Technologies 700V CoolGaN™ G4 Power Transistors
05/27/2567
Designed with low Rth(j-c) for high-power applications and highly efficient power switching.
Renesas Electronics TP65H050G4YS 650V SuperGaN® FET
Renesas Electronics TP65H050G4YS 650V SuperGaN® FET
03/15/2567
50mΩ gallium nitride (GaN) normally-off device available in 4 Lead TO-247 package.
Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT
Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT
02/22/2567
72mΩ RDS(on) in top-side-cooled, surface-mount TOLT package that meets the JEDEC-standard (MO-332).
Nexperia GAN039 CCPAK1212-Packaged Power GaN FETs
Nexperia GAN039 CCPAK1212-Packaged Power GaN FETs
12/20/2566
Copper-clip package technology with low inductances/switching losses and high reliability.
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