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NVH4L015N065SC1

Name: onsemi NVH4L015N065SC1
Brand: onsemi
SKU: 863-NVH4L015N065SC1
Price: 1024.73 THB
Availability: InStock

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Mouser No:

863-NVH4L015N065SC1

Mfr. No:

NVH4L015N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 650V

Datasheet:

NVH4L015N065SC1 Datasheet

ECAD Model:

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In Stock: 384

Stock:: 384 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (THB)

Qty.	Unit Price	Ext. Price
	฿1,024.73	฿1,024.73
	฿915.20	฿9,152.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Package/Case:	TO-247-4
Tradename:	EliteSiC
Brand:	onsemi
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	NVH4L015N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC

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Datasheet

NVH4L015N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L015N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.