APML-600JV/JT Photo MOSFETs

Broadcom APML-600JV/JT Photo MOSFETs are high-voltage photo MOSFETs designed for automotive applications. These MOSFETs consist of an AlGaAs infrared Light Emitting Diode (LED) input stage that is optically coupled to a high-voltage output detector circuit. This detector consists of a high-speed photovoltaic diode array and driver circuitry to switch ON/OFF two discrete high-voltage MOSFETs. The APML-600JV/JT photo MOSFET turns ON (contact closes) with a minimum input current of 1.5mA through the input LED. The photo MOSFET turns OFF (contact opens) with an input voltage of 0.4V or less. The APML-600JV/JT MOSFETs feature a compact solid-state bi-directional signal switch and are AEC-Q101 qualified. The APML-600JV/JT MOSFETs provide reinforced insulation and reliability to deliver safe signal isolation in automotive and high-temperature industrial applications. Ideally, these MOSFETs are used in battery insulation resistance measurement/leakage detection and Battery Management System (BMS).