MACOM Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)-Based Monolithic Microwave Integrated Circuit (MMIC) Power Amplifiers are optimized for high-power applications, such as ultra-broadband amplifiers, satellite uplinks, and test instrumentation. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. The GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. These MACOM MMIC power amplifiers enable wide bandwidths to be achieved in a small footprint.
