SIEH4800EW-T1-GE3

Vishay
78-SIEH4800EW-T1-GE3
SIEH4800EW-T1-GE3

Mfr.:

Description:
MOSFETs N-CHANNEL 80-V (D-S) MOSFET

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Vishay SIEH4800EW-T1-GE3

In Stock: 2,765

Stock:
2,765 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 2765 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
฿-.--
Ext. Price:
฿-.--
Est. Tariff:

Pricing (THB)

Qty. Unit Price
Ext. Price
฿194.03 ฿194.03
฿134.88 ฿1,348.80
฿97.50 ฿9,750.00
฿96.85 ฿48,425.00
฿78.98 ฿236,940.00

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
Si
SMD/SMT
PowerPAK-8
N-Channel
1 Channel
80 V
34 A
1.15 mOhms
- 20 V, 20 V
4 V
278 nC
- 55 C
+ 175 C
3.4 W
Enhancement
Brand: Vishay
Fall Time: 30 ns
Forward Transconductance - Min: 150 S
Product Type: MOSFETs
Rise Time: 40 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 s
Typical Turn-On Delay Time: 140 ns
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Attributes selected: 0

Datasheet

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET

Vishay / Siliconix SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET is designed for high-efficiency power switching applications. Housed in a compact PowerPAK® 8mm x 8mm bond wireless (BWL) package, the SiEH4800EW delivers an exceptionally low on-resistance of 0.00115Ω at a VGS of 10V, minimizing conduction losses and improving thermal performance. With a maximum continuous drain current of 260A and a low gate charge of 117nC, the Vishay / Siliconix MOSFET is optimized for fast switching and high-current handling, making it ideal for use in synchronous rectification, motor drives, and high-performance DC-DC converters. A rugged design and advanced trench technology ensure reliable operation in demanding environments.

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