QPD1013SR

Qorvo
772-QPD1013SR
QPD1013SR

Mfr.:

Description:
GaN FETs DC-2.7GHz 150W PAE 64.8%

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 100   Multiples: 100
Unit Price:
฿-.--
Ext. Price:
฿-.--
Est. Tariff:
This Product Ships FREE

Pricing (THB)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 100)
฿5,068.38 ฿506,838.00

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-6
N-Channel
1.7 A
- 40 C
+ 85 C
67 W
Brand: Qorvo
Configuration: Single Triple Drain
Development Kit: QPD1013EVB01
Gain: 21.8 dB
Maximum Drain Gate Voltage: 65 V
Maximum Operating Frequency: 2.7 GHz
Minimum Operating Frequency: 1.2 GHz
Moisture Sensitive: Yes
Output Power: 178 W
Packaging: Reel
Product Type: GaN FETs
Series: QPD1013
Factory Pack Quantity: 100
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Part # Aliases: QPD1013
Unit Weight: 7.792 g
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CNHTS:
8541210000
CAHTS:
8517620090
USHTS:
8541290055
TARIC:
8517620000
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

QPD1013 GaN RF Transistor

Qorvo QPD1013 GaN RF Transistor is a high-power, wide-bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single-stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.