π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (THB) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ 3,371In Stock
Min.: 1
Mult.: 1
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-3PN 3,324In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS 13In Stock
150Expected 3/2/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-3PN 64In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFETs TO252 900V 2A N-CH MOSFET 2,125In Stock
Min.: 1
Mult.: 1
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 40In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFETs Pb-FPOWERMOSFETTRANSISTORTO-220SISPD=35WF=1MHZ 290In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS 159In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-220SIS 204In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN 72In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray
Toshiba MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS 313In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube