Bench Talk

Bench Talk for Design Engineers | The Official Blog of Mouser Electronics

On มิถุนายน 29, 2021 in All, Automotive by Vishay Intertechnology Inc

Vishay understands the challenge of designing for the road. They design and manufacture the fundamental building blocks of every electronic system. When it comes to automobiles and other types of vehicles, every component is important, down to the last resistor.

Tagged With: aec qualification, automotive, capacitors, diodes, inductors, mosfets, optoelectronics, passives components, rectifiers, resistors, semiconductors, vishay

Infineon Technologies CoolSiC™ Works in the Trenches

On พฤษภาคม 12, 2021 in All, EIT 2021, Power, Wide Bandgap by Paul Golata

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. Infineon’s trench MOS technology is leading the way in power management.

Tagged With: carbide, coolsic, diode, diodes, infineon technologies, mosfet, mosfets, oxide, power, power management, reliability, sic, silicon, silicon carbide, system, transistor, trench, wide bandgap

Smart Cooking with RF Energy

On พฤษภาคม 20, 2015 in All, Power, RF by Rudy Ramos

With the exception of changes to the exterior design, to match the flavor of the decade’s décor and the addition of digital readouts, the microwave oven has pretty much remained the same since its inception. That is, until now, with the advent of new high-power LDMOS RF transistor technology, that outdated kitchen appliance we’ve all come to depend on for heating up our lunches might just be getting a new lease on life.

Tagged With: Magnetron, Microwaves, MOSFETS, Power, RF, Solid State RF Transistors

GaN the Giant Killer?

On มกราคม 28, 2014 in Wide Bandgap by Barry Manz

Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been made of its inherent advantages, leading to projections that it will displace gallium arsenide and silicon LDMOS. However, for a variety of reasons GaN is more likely to complement its more entrenched rivals than displace them.

Tagged With: GaN, MOSFETS, RF Power, Silicon, Wide Bandgap

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